(China (Mainland))
Product Summary
The BFP520E6327 is a NPN Silicon RF Transistor.
Parametrics
Absolute maximum ratings: (1)Collector-emitter voltage:2.5 V; (2)Collector-base voltage:10V; (3)Emitter-base voltage:1V; (4)Collector current:40 mA; (5)Base current:4mA; (6)Total power dissipation:100 mW; (7)Junction temperature:150℃; (8)Ambient temperature:-65℃ to 150℃; (9)Storage temperature:-65℃ to 150℃.
Features
Features: (1)For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V; (2)Outstanding Gms = 23 dB; (3)Noise Figure F = 0.95 dB; (4)For oscillators up to 15 GHz; (5)Transition frequency fT = 45 GHz; (6)Gold metallization for high reliability; (7)SIEGET 45 - Line, 45 GHz fT - Line.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 BFP520E6327 |
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TRANS NPN RF 2.5V SOT-343 |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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BFP520 |
Other |
|
Data Sheet |
Negotiable |
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BFP520E6327 |
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TRANS NPN RF 2.5V SOT-343 |
Data Sheet |
Negotiable |
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|
BFP520F |
Other |
|
Data Sheet |
Negotiable |
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BFP540 |
Other |
|
Data Sheet |
Negotiable |
|
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BFP540F |
Other |
|
Data Sheet |
Negotiable |
|
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BFP540FE6327 |
Infineon Technologies |
Transistors Bipolar (BJT) NPN 4.5 V 80 mA |
Data Sheet |
Negotiable |
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